Electric-field effect on La$_{0.9}$Ba$_{0.1}$MnO$_{3}$ strained films.
POSTER
Abstract
Electric field effect on superconducting films can modulate the carrier concentration of the films and the superconducting transition temperatures. Although the change of the carrier concentration is relatively small at a field of around 10$^{8}$ V/cm, T$_{C}$ can be altered in a range as wide as few degrees. In this study, a La$_{0.9}$Ba$_{0.1}$MnO$_{3}$ strained films with a thickness of 20nm was constructed into similar geometry as earlier reports, various gate voltages, equivalent to 0$\sim $10$^{6}$ V/cm, were applied while measuring resistances as a function of temperature around the metal-insulator transition temperatures. It is found that the T$_{C}$ and the resistance at constant temperature changes sharply at low gate voltage and saturated to a certain value at large gate voltage.
Authors
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Cheng-Pang Lin
Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-sen University, Kaohsiung, Taiwan
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Y.H. Ho
Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-sen University, Kaohsiung, Taiwan
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Hsiung Chou
Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-sen University, Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-sen University, Kaohsiung, Taiwan