Spin-glass ordering in the layered III-VI Diluted Magnetic Semiconductor Ga$_{1-x}$Mn$_{x}$S

A spin-glass transition has been observed in a class of materials based on a layered III-VI semiconducing host. We have performed dc magnetization and ac susceptibility measurements on the diluted magnetic semiconductor Ga1-xMnxS ($x$ = 0.09). A scaling analysis of the nonlinear magnetization just above the transition gives \textit{Tc} = 11.2 +/- 0.2 K, and the critical exponent values gamma~= 4.0 +/- 1.0 and beta = 0.8 +/- 0.2. The non-linear magnetization scaling for Ga1-xMnxS follow the same universal scaling function characterized with the same values of $\gamma $ and $\beta $ as Zn$_{0.49}$Mn$_{0.51}$Te over many orders of magnitude along each axis. The values for the critical exponents $\gamma $ and $\beta $ obtained in this work are in excellent agreement with values reported for other spin-glass materials. These results represent convincing evidence that the III{\-}VI diluted magnetic semiconductor Ga$_{1-x}$Mn$_{x}$S undergoes a true spin-glass transition and is in a subset of the class of insulating spin-glass materials with short-range interactions. The observed spin-glass transition in Ga1-xMnxS is unprecedented in the published literature on III-VI DMS.