Si/Ge Superlattice Structures for Thermoelectric Power Generation

ORAL

Abstract

Research conducted at RTI into the use of thin films, in particular superlattice materials, for thermoelectric power generation has focused on three materials families: Bi$_{2}$Te$_{3}$, PbTe, and Si/Ge. The Bi$_{2}$Te$_{3}$-based superlattice materials have already produced record ZT (thermoelectric figure-of-merit) and devices using these low temperature materials ($\sim $200\r{ }C) have surpassed bulk performance during power generation. RTI has also developed the growth of Si/Ge superlattice films as well as their fabrication into power generation devices applications at higher temperatures ($\sim $500\r{ }C). Results presented will include confirmation of superlattice structure via X-ray diffraction, showing well formed satellite peaks indicative of a high-quality superlattice. In addition, data will be presented that shows the lowering of thermal conductivity by the superlattice structure with nearly a 5x reduction in lattice thermal conductivity compared to the alloy film. Initial thin-film power device results showing $>$2{\%} efficiency and 2x improvement of ZT over SiGe alloys, at $\Delta $T of 378K and T$_{mean}$ of 484K, will be presented.

Authors

  • James Caylor

    RTI International

  • Rama Venkatasubramanian

    RTI International