Electronic transport across a Carbon nanotube Heterojunction: Experimental observations of high temperature Coulomb Charging and level spacing.

ORAL

Abstract

We present electrical transport measurements of individual a single-wall carbon nanotube in which the chiral indices (n, m) are not fixed along the nanotube length. These kinds of structures are known to show strong rectifying behavior in current voltage characteristics. At low temperatures the device essentially behaves like a quantum dot with very high charging energy and level-spacing. These features can be seen till 70K also, making it a high temperature single electron transistor.

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Authors

  • Bhupesh Chandra

    Columbia University, Columbia University, Department of Mechanical Engineering

  • Yang Wu

    Columbia University

  • Meninder Purewal

    Columbia University, Columbia University, Department of Applied Physics and Applied Mathematics

  • Mingyuan Huang

    Columbia University, Columbia.University

  • Hugen Yan

    Columbia University, New York, NY10027, Columbia University

  • Limin Huang

    Columbia University

  • Stephen Brien

    Columbia University

  • Tony Heinz

    Columbia University, New York, NY 10027, Columbia University

  • Philip Kim

    Physics Department, Columbia University, Columbia University

  • James Hone

    Columbia University, Department of Mechanical Engineering, Columbia University