Electronic Structure and Carrier Mobility in Strain-Engineered Nanostructures

ORAL

Abstract

Strain engineering is a major driving force to continue the performance scaling of silicon devices. However, currently strain engineering is confined in planar hetero-structures. It is anticipated that future generation of devices may employ nanostructures and new quantum principles. Here, we present theoretical studies of strain engineered nanostructures for potential device applications. Combining first-principles and finite element calculations, we analyze the electronic band structure and carrier mobility in SiGe nanotubes and Si nanomembranes that are strain-modulated by Ge quantum dots.

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Authors

  • Decai Yu

    University of Utah

  • Yu Zhang

    University of Utah

  • Ji Zang

    Department of Materials Science and Engineering, University of Utah, Salt Lake City, UT 84112, University of Utah

  • Feng Liu

    Department of Materials Science and Engineering, University of Utah, Salt Lake City, UT 84112, University of Utah, Department of Materials Science and Engineering, University of Utah, Salt Lake City, UT 84112 USA, Department of Materials Science and Engineering, Univeristy of Utah, Salt Lake City, UT 84112, Department of Material Science and Engineering, University of Utah, Salt Lake City, UT 84112-0610, USA, Department of Material Science and Engineering, University of Utah, Salt Lake City, UT 84112