Electronic transport of low concentrations of P3HT molecules across nanogap source-drain electrodes.

Poly 3-hexothiophene (P3HT) is a widely studied, versatile material used in organic electronics. Little is known, however, about the electronic transport properties of individual or small groups of P3HT molecules. Initial experiments suggest that the behavior of low concentrations of molecules differ significantly from bulk P3HT. We have fabricated nanoscale P3HT transistors using electromigrated nanogap structures as source-drain electrodes and the underlying silicon/SiO$_{2}$ substrate as a gate. We present preliminary transport data on these devices as a function of temperature and electrode material.