Novel Channel Materials for CMOS Technology
INVITED · A6
Presentations
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III-V MOSFETs: From Materials {\&} Physics to Devices
COFFEE_KLATCH · Invited
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Authors
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Matthias Passlack
Freescale Semiconductor, Inc.
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Stability of Metal Oxide/Ge and Metal Oxide/III-V Interfaces and Implications for Low Defect Density MOS Devices
COFFEE_KLATCH · Invited
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Authors
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Paul McIntyre
Stanford University
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Dangling-bond defects and hydrogen passivation in germanium
COFFEE_KLATCH · Invited
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Authors
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Justin R. Weber
Department of Physics, University of California, Santa Barbara, California 93106-9530, USA
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Scanning-tunneling microscopy and spectroscopy of oxide deposition on III-V semiconductor surfaces
COFFEE_KLATCH · Invited
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Authors
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Andrew Kummel
UCSD
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Monte Carlo simulations of carrier flow in novel gate materials
COFFEE_KLATCH · Invited
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Authors
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Massimo (Max) Fischetti
University of Massachusetts
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