A Physical Model for Resistive Switching In Metal-Oxide Interface

ORAL

Abstract

Resistive switching in metal-oxide interface has been studied extensively and different models have been proposed. We have investigated the switch in metal-PCMO ($\Pr_{0.7} Ca_{0.3}MnO_3)$ sample. Interface R and C, both have been found to be frequency independent almost up to 10 MHz. Also the activation energy for both the states (High and Low) are almost the same with bulk as found in R(T) plot. The physical picture will be very shallow potential wells, which may not be enough for retention observed. A pure electronic process (trapping and de-trapping in defects) of carrier only, as suggested earlier, will not be correct answer.

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Authors

  • Nilanjan Das

    • Department of Physics,University of Houston and TCSUH

  • Stephen Tsui

    • Department of Physics,University of Houston and TCSUH

  • Yaqi Wang

    • TCSUH and Department of Physics, University of Houston, Houston, Texas 77204-5002, USA
    • Department of Physics,University of Houston and TCSUH

  • Yuyi Xue

    • Department of Physics,University of Houston and TCSUH

  • Ching-Wu Chu

    • TCSUH and Department of Physics, University of Houston, Houston, Texas 77204-5002, USA
    • Dept. of Physics and Texas Center for Superconductivity, University of Houston, Houston, TX 77204-5002
    • Department of Physics,University of Houston,TCSUH,LBNL,California and HKUST,Hong Kong