Energy gaps and Stark effects in boron nitride nanoribbons

Graphene nanoribbons, which have been recently synthesized, are regarded as promising candidate materials for nanoscale electronics. It is expected that boron nitride nanoribbons may be produced in a similar way. Notwithstanding their structural similarity, the electronic properties of boron nitride nanoribbons are qualitatively different from those of graphene nanoribbons. Here, we present first-principles calculations of the electronic properties of boron nitride nanoribbons with widths up to 10 nm both without any external potential or under a transverse electric field. The results show a rich set of behaviors and promise for possible applications of boron nitride nanoribbons in nanoscale electronics.