Adding depth sensitivity to photoelectron microscopy using the standing wave/wedge method
ORAL
Abstract
Photoelectron microscopy (PEEM) is by now a well-established technique for studying many types of multilayer or multicomponent structure, including samples of relevance to spintronics, semiconductor technology, and polymer-based materials. The lateral resolution in such microscopes is typically 20 nm, but with the prospect of going down to ca. 1 nm in the near future. However, resolution perpendicular to the surface is not inherent in PEEM measurements, and we here discuss a novel method for providing this at sub-nm resolution, by exciting the photoelectrons with a standing wave created by soft x-ray reflection from a multilayer substrate, and growing one layer of the sample in a wedge form. This standing wave/wedge method has been demonstrated for the first time in measurements with a PEEM located at BESSY in Berlin.
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Authors
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Florian Kronast
BESSY GmbH, Berlin
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Alexander Keiser
IFF9, Juelich Research Center
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Carsten Wiemann
IFF9, Juelich Research Center
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Ruslan Ovsyannikov
BESSY GmbH, Berlin
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Andrea Locatelli
Elettra, Trieste
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Daniel Buergler
IFF-9, Juelich Research Center
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Reinert Schreiber
IFF-9, Juelich Research Center
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See-Hun Yang
IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120, USA, IBM Almaden Research Ctr.
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Hermann Duerr
BESSY GmbH, Berlin
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Claus Schneider
IFF9, Juelich Research Center
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Charles Fadley
UC Davis Physics and Mat. Sci. Div., LBNL, Davis, CA, UC Davis and LBNL Mat. Sci. Div.