Correlation effects in charge-density wave insulator BaBiO$_3$
ORAL
Abstract
The negative-U nature of $\rm BaBiO_3$ leads to a charge-ordered insulating state in which pentavalent $\rm Bi^{5+}$ coexists with trivalent $\rm Bi^{3+}$. Despite the apparent absence of strong-correlation effects in $\rm BaBiO_3$ standard density functional (DFT) theory yields a much too small band gap of 0.14 eV. By means of an hybrid-DFT approach combined with self-consistent GW including vertex corrections we investigate the electronic, vibrational and dielectric properties of $\rm BaBiO_3$. We show that the inclusion of strong-correlation effects increases the band gap up to 1.2 eV, shifts the oxygen breathing modes upwards by $\approx$ 2 THz and reduces the dielectric constant by a factor of 3. The overall agreement with available experimental data is significantly improved.
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Authors
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Cesare Franchini
Faculty of Physics, University of Vienna and Center for Computational Materials Science
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Martijn Marsman
Faculty of Physics, University Vienna, and Center for Computational Materials Science, Faculty of Physics, University of Vienna and Center for Computational Materials Science
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Georg Kresse
Faculty of Physics, University Vienna, and Center for Computational Materials Science, Faculty of Physics, University of Vienna and Center for Computational Materials Science