Growth and Characterization of VLS-type (Zn,Mn)Se nanowires

ORAL

Abstract

Magnetically-doped semiconductor nanowires offer an interesting regime for exploring carrier-induced ferromagnetism in the presence of a 1D density of states [Dietl {\it et al}, Phys. Rev. B {\bf 55}, R3347 (1997)]. We discuss the growth and structural characterization of ZnSe nanowires doped with Mn. With diameters ranging from $\sim $30 nm down to $\sim$5 nm, these wires potentially provide 1D or quasi-1D systems in which to study collective magnetic behavior. The wires are grown via the vapor- liquid-solid mechanism on GaAs substrates using an ultrahigh vacuum molecular beam epitaxy system, with gold nanoparticles as the seeds for wire growth. The wires form in a dense random array, as shown by scanning electron microscopy. Transmission electron microscopy is used to study the structure and growth direction of individual wires released from the substrate, and the composition of individual wires is studied with energy dispersive x-ray spectroscopy. Supported by NSF MRSEC and ONR MURI.

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Authors

  • Benjamin Cooley

    Dept. of Physics and Materials Research Institute, Penn State University

  • Trevor Clark

    Materials Research Institute, Penn State University

  • Nitin Samarth

    Dept. of Physics and Materials Research Institute, The Pennsylvania State University, Dept. of Physics, The Pennsylvania State University, Dept. of Physics, Penn State University, Physics Department, Penn State U,University Park, PA