Reconfigurable spin logic gate in Gallium Arsenide

Electrical injection and detection of pure spin currents has recently been shown in semiconductors. Here we concentrate on the realization of spin-based logic circuits in semiconductors. We report on the electrical injection and detection of spin polarized currents using reconfigurable magnetic contacts. Fe/GaAs Schottky contacts are used to create and analyze the spin current in a GaAs transport channel. Non-local detection techniques show that the circuit output voltage can be modulated using current carrying wires that independently switch the magnetization of the contacts. We use this effect to generate a logic function based on pure spin transport in semiconductors. The realization of this integrated spin-based structure may facilitate the development of pure spin-based logic gates.