Electric field dependent $g$ tensor modulation for a hydrogenic Si donor in bulk GaAs

We present calculations demonstrating the feasibility of electrical manipulation of a donor bound electron spin using $g$ tensor modulation resonance. We calculate the electron $g$ factor as a function of applied electric field, and show that $dg/dE$ is largest when the applied magnetic and electric fields are parallel. Unlike quantum dots, the donor's $g$ factor is highly nonlinear as a function of the applied magnetic field, and the anisotropy of the $g$ tensor also has a strong magnetic field dependence. The calculations are for a Si impurity in GaAs, and are done using real-space 8-band k.p theory in the envelope approximation.