Avalanches in the Metal-Insulator transition in Vanadium Oxide nano-scaled junctions

ORAL

Abstract

We present transport measurements on sub-micron devices of VO$_{2}$. Instead of the usual smooth metal insulator transition, we observe for the first time multiple resistive steps. The temperature driven transition between the two phases occurs through a series of avalanches of different amplitude, ranging over 2 decades of resistance. The data is analyzed assuming a generic normalized probability distribution. Results are similar to those obtained in martensitic transitions or Barkhausen noise in ferromagnets, implying universality of first order phase transition. We will discuss the distribution of resistance avalanches as a function of temperature caused by the percolative nature of resistive transition. In particular we will focus on the effect of the VO$_{2}$ junction dimensions and the transport measurement conditions (such as applied current and temperature ramp rate) on the results. Work supported by the US --Department of Energy.

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Authors

  • Amos Sharoni

    Unviersity of California, San Diego, Department of Physics, University of California San Diego, La Jolla, Ca 92093

  • Gabriel Ram\'Irez

    Unviersity of California, San Diego

  • Ivan K. Schuller

    University of California San Diego, Physics Department, University of California - San Diego, La Jolla, CA 92093-0319, Physics Department, University of California, San Diego, La Jolla CA, Unviersity of California, San Diego, Department of Physics, University of California San Diego, La Jolla, Ca 92093, University of California, San Diego, followed by Ivan Schuller, University of California, San Diego, Dept of Physics, University of California, San Diego, La Jolla, CA 92093, Physics Department, UC San Diego