Hysteresis in the anomalous Hall effect of MnAs thin films

ORAL

Abstract

We report detailed measurements of the Hall effect in MBE-grown MnAs thin films on $(001)$-GaAs as a function of temperature. Hysteresis of the Hall resistivity is observed for temperatures between 300 and 355~K. Non-linear behavior of the Hall resistivity persists up to 390~K. The appearance of hysteresis at low temperatures can be explained by the emergence of stable, out-of-plane domains due to the shape anisotropy of the contracting $\alpha$-phase. However, the persistence of the hysteresis and the anomalous Hall effect at temperatures significantly above 318~K is not consistent with the complete transformation of the $\alpha$-phase and introduces new questions about the magnetic properties of the $\beta$-phase.

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Authors

  • Felix T. Jaeckel

    Center for High Technology Materials, University of New Mexico, 1313 Goddard St. SE, Albuquerque, NM 87106

  • Andreas Stintz

    Center for High Technology Materials, University of New Mexico, 1313 Goddard St. SE, Albuquerque, NM 87106

  • Abdel-Rahman A. El-Emawy

    Center for High Technology Materials, University of New Mexico, 1313 Goddard St. SE, Albuquerque, NM 87106

  • Kevin J. Malloy

    Center for High Technology Materials, University of New Mexico, 1313 Goddard St. SE, Albuquerque, NM 87106