Interactions of Aromatic Compounds with Graphene

ORAL

Abstract

We have used back-gated graphene field effect transistors (FETs) on Si/SiO$_{2}$ substrates to study the interactions of graphene with six-membered ring aromatic compounds C$_{6}$H$_{2n}$ ($n$ = 3-6). Electronic detection occurs through the shift of the of the source-drain resistance maximum (``Dirac peak'') with gate voltage. The size of the \textit{positive} shift of the Dirac peak is found to be linear in to the $\pi $ electron count of the molecule, suggesting the coupling between these $\pi $ electrons and those in the graphene may be responsible for the observed effects.

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Authors

  • Hugo Romero

    Dept. of Physics, Penn State, Physics Department, Pennsylvania State University, Physics Department, Penn State University

  • Humberto Gutierrez

    Department of Physics, The Pennsylvania State University, Physics Department, Pennsylvania State University, Department of Physics, Pennsylvania State University, Physics Department, Penn State University

  • Peter Eklund

    Physics Department, Penn State University, Dept. of Physics, Penn State, Department of Physics, The Pennsylvania State University, Department of Physics, Department of Materials Science and Engeering, The Pennsylvania State University, Department of Physics, Department of Material Science and Engineering, Pennsylvania State University, University Park, PA 16802, Physics Department, Material Science \& Engineering Department, Department of Physics, Department of Material Sciece and Engineering, Pennsylvania State University, Department of Physics, Department of Materials Science \& Engineering and Materials Research Institute, Penn State University, Physics Department,Materials Science \& Engineering Department, Pennsylvania State University