Magnetic memory and logic based on spin effects in graphene

We report on a novel approach to the problem of low-power-consuming non-volatile magnetic random access memory (MRAM) and logic design that is based on the unique properties of the graphene placed in interface between two magnetic dielectric layers. We find that by combining the electrical effect on the exchange bias field and a giant magneto-resistance effect of the graphene/ferromagnet hybrid structures, a new non-volatile MRAM device is possible. In such a device an electric bias realizes the low energy writing bits instead of an external magnetic field with high energy consumption. In particular, the structure under consideration consists of a three ferromagnetic dielectric layers, which are coupled through monolayer and bilayer graphene films. Interplay of two graphene layers can mediate the exchange bias fields applied to different sides of the free ferromagnets resulting in programmable logic operations.