Gate Controlled Negative Differential Resistance and Photoconductivity Enhancement in Carbon Nanotube Intra-connects

ORAL

Abstract

Field effect transistors were fabricated using carbon nanotubes (CNT). Gate-controlled, N-shaped negative differential resistance (NDR) has been demonstrated. In addition, a large photoconductance effect was associated with the NDR. The intra-connects -- bridges spanning across planar electrodes and contain individual tube or in a small bundle -- were grown using chemical vapor deposition (CVD) precisely between very sharp metal tips on the pre-fabricated electrodes. NDR was observed for intra-connects exhibiting either, ohmic or, non-ohmic contacts. Yet, the enhanced photoconductivity was more pronounced for intra-connects exhibiting ohmic contact at zero gate bias.

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Authors

  • Seon Woo Lee

    • Electronic Imaging Center at NJIT and the Electrical and Computer Engineering Department, New Jersey Institute of Technology (NJIT), Newark, NJ 07102

  • Slava Rotkin

    • Lehigh University
    • Department of Physics, Lehigh University
    • Lehigh University, Physics Dept., 16 Memorial Dr. East, Bethlehem, PA 18015
    • Lehigh University, Physics Department, 16 Memorial Drive East, Bethlehem, PA 18015
    • Physics Department and CAMN, Lehigh University, Bethlehem, PA 18015

  • Andrei Sirenko

    • New Jersey Institute of Technology
    • Physics Department, New Jersey Institute of Technology (NJIT), Newark, NJ 07102

  • Haim Grebel

    • Deaprtment of Electrical and Computer Engineering and the Electronic Imaging Center
    • New Jersey Institute of Technology
    • New Jersey Nanotechnology Consortium (NJNC), Lucent Technologies Bell Labs, Murray Hill, NJ 07974
    • Electronic Imaging Center at NJIT and the Electrical and Computer Engineering Department, New Jersey Institute of Technology (NJIT), Newark, NJ 07102