Transient Current Spectroscopy of a Si Quantum Dot

We present a transient current spectroscopy study of a Si-MOS based quantum dot. The study was conducted in the few electron region. A voltage pulse pumped the electrons into an excited orbital state and the non-equilibrium transient current through the dot was recorded. The evolution of the excited state as a function of magnetic field shows signatures of a transition from a spin singlet state to a triplet state of an electron pair. A pump-and-probe technique was employed to set a lower limit of the triplet-singlet relaxation time. The work was sponsored by United States Department of Defense.