Diffraction Symmetries in Epitaxially-Grown Graphene and the SiC Substrate

Diffraction patterns in epitaxially-grown graphene and the SiC substrate are studied by observing dark field low energy electron microscopy (LEEM) and low energy electron diffraction (LEED) images. The breaking of 6-fold symmetry is mapped out as a function of the position on the sample for different crystal periodicities. Such observations provide information about the stacking and domain boundaries in epitaxially-grown graphene.