Quantum and transport scattering times in graphene

ORAL

Abstract

We study the quantum ($\tau_q$) and transport ($\tau_t$) scattering times of single layer graphene mechanically exfoliated on SiO$_2$ and polycrystalline Pb(Zr,Ti)O$_3$ (PZT) substrates. The PZT substrate exhibits a gating efficiency of $\sim2\times10^{11}$/cm$^2$/V$_g$(V), corresponding to a dielectric constant of $\sim$12. We extract $\tau_q$ from the magnetic field dependence of Shubnikov de Haas oscillations and $\tau_t$ from the zero field mobility, respectively. For the PZT-gated graphene, in the density range of $2\times10^{12} $/cm$^2

–

Authors

  • Xia Hong

    • Department of Physics, Penn State University
    • Pennsylvania State University

  • K. Zou

    • Department of Physics, The Pennsylvania State University
    • Department of Physics, Penn State University

  • J. Zhu

    • Department of Physics, The Pennsylvania State University
    • Department of Physics, Penn State University

  • A. Posadas

    • Department of Applied Physics, Yale University

  • J. Hoffman

    • Yale University and Center for Research on Interface Structures and Phenomena (CRISP)
    • Department of Applied Physics, Yale University

  • Charles Ahn

    • Yale University and Center for Research on Interface Structures and Phenomena (CRISP)
    • Yale University
    • Yale, CRISP
    • Department of Applied Physics, Yale University