Microwave Rectification by Carbon Nanotube Schottky Diodes

ORAL

Abstract

We report the fabrication and electrical characterization of carbon nanotube Schottky diodes (CNT-SDs) via photolithography on high-frequency-compatible substrates using dissimilar contacts of chromium and platinum. The diodes are well-described by the ideal diode equation (n = 1.0). DC and low-frequency behavior is compared to a model of a diode in series with a resistor. The diodes rectify microwave signals beyond 18GHz and produce dc currents of hundreds of nanoamperes. The frequency and voltage dependence is used to estimate the junction capacitance of 1aF and an intrinsic device cut-off frequency of 400GHz. \\[3pt] [1] Cobas, E. and Fuhrer, M., Applied Physics Letters 93, 043120 (2008).

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Authors

  • Enrique Cobas

    Department of Physics and Center for Nanophysics and Advanced Materials, University of Maryland College Park

  • Steven Anlage

    University of Maryland, College Park: Department of Physics, Department of Electrical \& Computer Engineering, Center for Nanophysics and Advanced Materials, Physics Department, University of Maryland, College Park, MD 20742-4111, Department of Physics and Center for Nanophysics and Advanced Materials, University of Maryland College Park

  • Michael Fuhrer

    University of Maryland, Department of Physics and Center for Nanophysics and Advanced Materials, University of Maryland College Park, Department of Physics and Center for Nanophysics and Advanced Materials, University of Maryland, College Park, MD 20742, USA, Materials Research Science and Engineering Center, Center for Nanophysics and Advanced Materials, Dept of Physics, Univ. of Maryland, College Park, MD, Materials Research Science and Engineering Center and Center for Nanophysics and Advanced Materials, Department of Physics, University of Maryland, Department of Physics and Center for Nanophysics and Advanced Materials, University of Maryland, College Park, MD 20742-4111, USA