Effect of N to In flux ratio on the InN surface morphologies grown on single crystal ZnO (000$\overline 1 )$ substrate by plasma-assisted molecular beam epitaxy
POSTER
Abstract
Authors
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Cheng-Hung Shih
Department of physics, National Sun Yat-sen University, Kaohsiung, Taiwan, R.O.C.
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Ikai Lo
Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan, Republic of China, Center for Nanoscience and Nanotechnology and Dept of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan, Department of physics, National Sun Yat-sen University, Kaohsiung, Taiwan, R.O.C., Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan, R.O.C., Department of physics, National Sun Yat-sen University, Kaohsiung, Taiwan, Republic of China
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Wen-Yuan Pang
Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan, Republic of China, Center for Nanoscience and Nanotechnology and Dept of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan, Department of physics, National Sun Yat-sen University, Kaohsiung, Taiwan, R.O.C., Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan, R.O.C., Department of physics, National Sun Yat-sen University, Kaohsiung, Taiwan, Republic of China
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Shih-Hung Chuang
Department of physics, National Sun Yat-sen University, Kaohsiung, Taiwan, R.O.C.
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Chia-Hsuan Hu
Department of physics, National Sun Yat-sen University, Kaohsiung, Taiwan, R.O.C.
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Chia-Ho Hsieh
Institute of Material Science and Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan,, Institute of Material Science and Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan.