Scalable chemical vapor deposition of single- and few-layer graphene

We report the implementation of a simple and scalable method to prepare single and few-layer graphene films by chemical vapour deposition. Micro Raman spectroscopy analysis of the synthesized films revealed the presence of single and few-layer graphene domains throughout the substrate. Synthesized graphene films were recovered on Si/SiO$_{2}$ substrates where back-gated FETs were fabricated. Four-probe measurements revealed sheet resistance of $\sim $68 k$\Omega $/sq for the recovered films. I$_{DS}$-V$_{DS}$ and transfer characteristics indicate a weak p-type behavior in the films and weak modulation of the drain current by the gate bias.