Hall effect in magnetic semiconductor InMnSb epitaxial thin films

The magnetotransport properties of ferromagnetic $In_{1-x}Mn_{x}Sb$ semiconductor films with x=0.01 to 0.035 were measured from 1.5 K to 298K and magnetic fields up to 18T. The vapor phase epitaxial films are p-type with a hole concentration of $10^{19}~cm^{-3}$ and mobility of $10^{2}~cm^{2}/Vs$. The Hall resistivity is described by the equation $\rho_{xy}=R_{0}B+R_{A}M$ where $R_{0}$ and $R_{A}$ are the normal and anomalous hall coefficients, $B$ is the applied magnetic field and M is the magnetization. The films exhibited an anomalous Hall effect over entire temperature range. It was observed that $R_{A}$ is proportional to the longitudinal resistivity $(\rho_{xx})$ leading to a magnetoresistance dependant Hall voltage.