Transparent Thin Film Transistors based on Pristine and Doped Indium Oxide Nanowires

The key to the realization of transparent electronics is the development of transparent thin film transistors (TTFT) with good device performance, in terms of high device mobility, low temperature fabrication, and optical transparency. We present our work on the fabrication of high performance TTFTs using both pristine In$_{2}$O$_{3}$ nanowires and doped In$_{2}$O$_{3}$ nanowires. In$_{2}$O$_{3}$ nanowire TTFTs were made on glass and PET substrates with Al$_{2}$O$_{3}$ as gate insulator and ITO source/drain electrodes. These devices showed a transparency of about 80{\%} and n-type transistor performance. The device characteristics exhibit a subthreshold slope of 0.2 V/dec, a current on/off ratio of 10$^{6}$, and a field-effect mobility of 514 cm$^{2}$V$^{-1}$S$^{-1}$. We also fabricated TTFTs wbuilt on Arsenic-doped In$_{2}$O$_{3}$ nanowires with a field-effect mobility of 1,183.8 cm$^{2}$V$^{-1}$S$^{-1}$ without any post-treatments. In addition, we integrated TTFTs with organic light emitting diode (OLED) to make an active matrix organic light emitting diode (AMOLED) display, and thus made an animation by controlling the OLED light output.