Insitu Contact Resistance Evaluation of 2.6-2.9 THz Quantum Cascade Lasers
ORAL
Abstract
The fabrication of THz Quantum Cascade Lasers (QCL) requires a strong understanding of the two electrical contacts of the device. Contact resistance as well as contact/semiconductor interdiffusion properties must be designed to minimize series resistance, free carrier absorption, and e-e scattering. Here, insitu measurement of contact resistance using Transmission Line Measurement (TLM) pads has been implemented in the fabrication of 2.6-2.9 THz quantum cascade lasers. The measurement of contact resistances as part of device processing also verifies the correct etch depth of laser structure, uniformity of the etching, and the ohmic nature of the contacts. For example, the procedure has been used to successfully fabricate 2.93 THz lasers with 5 mW of continuous wave output power.
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Authors
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Neelima Chandrayan
Photonics Center, Dept. of Physics, UMass Lowell
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Krongtip Tremkoa
Photonics Center, Dept. of Physics, UMass Lowell
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Jin Li
Photonics Center, Dept. of Physics, UMass Lowell
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Xifeng Qian
Photonics Center, Dept. of Physics, UMass Lowell
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Shivashankar Vangala
Photonics Center, Dept. of Physics, UMass Lowell
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William Goodhue
Photonics Center, Dept. of Physics, UMass Lowell
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Andriy Danylov
Sub-millimeter Wave Technology Lab, Dept. of Physics, UMass Lowell
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Jerry Waldman
Sub-millimeter Wave Technology Lab, Dept. of Physics, UMass Lowell
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Robert Giles
Sub-millimeter Wave Technology Lab, Dept. of Physics, UMass Lowell
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William Nixon
U.S. Army National Ground Intelligence Center