\textit{P}-type InSb and In$_{x}$Ga$_{1-x}$As quantum wells remotely doped with Be

CMOS circuits require $p-$type transistors with high hole mobility, in addition to \textit{n{\-}}type transistors with high electron mobility. We have observed room-temperature hole mobilities of 100 and 600 cm$^{2}$/Vs in In$_{x}$Ga$_{1-x}$As and InSb quantum wells, respectively. The In$_{x}$Ga$_{1-x}$As wells are remotely doped with Be in In$_{x}$Al$_{1-x}$As barrier layers, and grown on InP substrates. The InSb wells are remotely doped with Be in Al$_{x}$In$_{1-x}$Sb barrier layers, and grown on GaAs substrates. We will discuss the effects of strain, structural parameters, and defect density on hole mobility in InSb and In$_{x}$Ga$_{1-x}$As quantum wells. In zinc-blende semiconductors, a narrower band gap leads to smaller effective masses for electrons and holes. Strain and confinement increase the energy splitting between holes with light in-plane mass and those with heavy in-plane mass. This work was supported by the NSF Grants DMR-0808086 and DMR-0520550.