Nitrogen doping in single-crystal MgO magnetic tunnel junctions.
ORAL
Abstract
Recent experiments have shown evidence for induced ferromagnetism in thin films of carbon and nitrogen-doped zinc oxide. We have discovered similar behavior in nitrogen-doped MgO films grown by plasma-assisted thermal evaporation. Here, we incorporate these films as tunneling barriers into single-crystal multilayer magnetic tunnel junctions and present experimental results showing the magnetoresistance and current-voltage characteristics for these structures.
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Authors
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Justin Brockman
IBM / Stanford
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Cheng-Han Yang
IBM / Stanford, IBM Almaden Research Center
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Mahesh Samant
IBM, IBM Almaden Research Center, IBM Almaden Research
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Kevin Roche
IBM, IBM Almaden Research
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Stuart Parkin
IBM, IBM Almaden Research Center, IBM Almaden Research