Nitrogen doping in single-crystal MgO magnetic tunnel junctions.

ORAL

Abstract

Recent experiments have shown evidence for induced ferromagnetism in thin films of carbon and nitrogen-doped zinc oxide. We have discovered similar behavior in nitrogen-doped MgO films grown by plasma-assisted thermal evaporation. Here, we incorporate these films as tunneling barriers into single-crystal multilayer magnetic tunnel junctions and present experimental results showing the magnetoresistance and current-voltage characteristics for these structures.

Authors

  • Justin Brockman

    IBM / Stanford

  • Cheng-Han Yang

    IBM / Stanford, IBM Almaden Research Center

  • Mahesh Samant

    IBM, IBM Almaden Research Center, IBM Almaden Research

  • Kevin Roche

    IBM, IBM Almaden Research

  • Stuart Parkin

    IBM, IBM Almaden Research Center, IBM Almaden Research