Transfer-free fabrication methods for graphene based devices

Integration of graphene into modern electromechanical systems necessitates processes that are both clean and fully automatable. Currently, methods for fabricating graphene based devices typically require a manual liquid transfer process that can easily damage the sheet. We discuss two transfer-free device fabrication techniques that are directly applicable to nanoscale electronics as well as NEMS resonators. Graphene is grown directly onto the final device substrate by using evaporated copper as a catalyst. The graphene is then patterned into the desired shape and the copper is removed by either a liquid or completely dry etch process. By using these techniques we are able to produce both ultra long graphene channels ($>$0.3 mm) as well as suspended graphene devices. Resulting arrays of graphene FETs are produced in high yield ($>$95{\%}) and exhibit uniform electrical properties including current saturation and moderate mobility.