Spin-polarized 2DEG through electrostatic field doping in LaAlO$_{3}$-EuO heterostructures

We recently presented theoretical calculations in support of the \textbf{electrostatic doping model} for the $n$-type LaAlO$_{3}$/SrTiO$_{3}$ interface and offered a consistent picture explaining the origin of charge and its localization at the interface\textbf{:} the strong internal electric field of the polar oxide (LAO) causes charge transfer to the conduction band of the adjacent oxide STO. In this talk we extend this concept to explore theoretically the possibility of creating \textbf{a spin polarized 2DEG} at the heterointerface between LAO and ferromagnetic semiconducting EuO. We use the density functional theory within the generalized gradient approximation (GGA) as implemented in the VASP code. We reports that the amount of spin polarized charge transferred from LaAlO$_{3}$ to EuO is of the order of 4.0$\times $10$^{13}$ cm$^{-2}$ and then exponentially decays to 5-6 EuO ($\sim $ 10 {\AA}) with 2 DEG characteristic.