Half integer quantum Hall effect in high mobility single layer epitaxial graphene

We present results on the quantum Hall effect for single layer epitaxial graphene grown on the C-face of 4H silicon carbide. Hall plateaus at half integer values and vanishing resistivity are observed for high mobility samples ($\mu= 20,000 cm^{2}/V.s$ at 4 K and $15,000 cm^{2}/V.s$ at 300 K) despite contamination and substrate steps. This is comparable to the best exfoliated graphene flakes on SiO2 and an order of magnitude larger than Si-face epitaxial graphene monolayers. Splitting of the n=0 Landau level ($\nu=1$) is observed at high field. These and other properties indicate that C-face epitaxial graphene is an ideal platform for graphene-based electronics.