A three dimensional approach to selective growth and photo-lithographic fabrication of graphene nanoribbon on SiC

We present a unique three-dimensional process for fabrication of epitaxial graphene devices on hexagonal silicon carbide. Pre-patterning of SiC substrate allows graphene growth on SiC crystal planes other than typical (000-1) and (0001) planes. Selective graphitization on these crystal planes are reported, which enables definition of graphene nanoribbon by standard photolithographic processing. Measurement of devices demonstrates the electronic viability of graphene grown on these SiC crystal planes and over SiC step edges, suggesting technologically practical methods of obtaining semiconducting graphene nanoribbons. Fabrication of $>$10,000 transistors on a 0.24cm$^{2}$ chip illustrates the scalability of this process.