Reversible Resistive Switching in (La,Pr,Ca)MnO$_{3}$; Cryogenic nonvolatile RAM

ORAL

Abstract

Cryogenic-temperature electronics technologies are a practical promise for continuing demand for high performance electronics. By utilizing the unique hysteretic behavior of perovskite (La,Pr,Ca)MnO$_{3}$ in the variation of temperature and applied electric fields, we have discovered that two electronically-distinct phases, with a huge difference in resistance ($>$10$^{5})$, can be repeatedly switched by applying various voltage pulses at cryogenic temperatures (e.g., 2 K), and the magnitude of resistance of each phase is highly stable with time. A multilevel memory effect for storing multiple bits was also found. We believe that the non-volatile cryo-PRAM utilizing our findings is an excellent candidate for memory devices for low-temperature electronic technologies such as quantum computers, Superconducting Rapid Single Flux Quantum (RSFQ) technology, low temperature detectors.

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Authors

  • H.T. Yi

    Department of Electrical and Computer Engineering, Rutgers University, Rutgers University, Rutgers Center for Emergent Materials \& Department of Physics and Astronomy, Rutgers University

  • T. Choi

    Department of Physics, Rutgers University, Rutgers University, Rutgers Center for Emergent Materials \& Department of Physics and Astronomy, Rutgers University

  • S.-W. Cheong

    Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ, 08854, Rutgers Center for Emergent Materials, Rutgers University, Department of Physics, Rutgers Univeristy, Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ, 08854, USA, Rutgers Center for Emergent Materials \& Department of Physics and Astronomy, Rutgers University