Peering inside a functioning Pt/TiO$_{2}$/Pt bipolar resistance switching device
ORAL
Abstract
Many transition-metal oxides exhibit electrical polarization-dependent resistance changes. Direct observation of the physical changes induced during this switching has been limited, due to challenges in observing subtle material changes occurring in a small volume. We use x-ray absorption spectromicroscopy and transmission electron microscopy (TEM) in order to determine the chemical and structural identity of the switching region in a functioning Pt/TiO$_{2}$/Pt device, fabricated on a thin transparent window. These transmission techniques allow probing of the physical properties of the switching layer between/during the application of an electrical bias. We directly observed the formation of a conductive channel following an electroforming process. The conductive channel is identified to be a nanoscale metallic suboxide (TiO$_{2-X})$, a phase generated within the TiO$_{2}$ matrix by the creation and ordering of oxygen vacancies. Besides shedding light on long-standing questions regarding the physical changes, we show how this work has informed new device engineering.
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Authors
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John Paul Strachan
Hewlett-Packard Labs
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Matthew Pickett
Hewlett-Packard Labs
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J. Joshua Yang
Hewlett-Packard Labs, Hewlett Packard Laboratories
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Julien Borghetti
Hewlett-Packard Labs
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A. L. D. Kilcoyne
Advanced Light Source, Lawrence Berkeley Labs
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Andreas Scholl
Advanced Light Source, LBNL, Advanced Light Source, Lawrence Berkeley Labs
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Shaul Aloni
The Molecular Foundry, Lawrence Berkeley Labs, The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
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Gilberto Medeiros-Ribeiro
Hewlett-Packard Labs, Hewlett Packard Laboratories
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R. Stanley Williams
Hewlett-Packard Labs, Hewlett Packard Laboratories