Energetics of Metal-Insulator Transition Field-Effect Transistors using Vanadium Oxide Thin Films

There is growing interest in exploring the use of metal-oxide materials as an alternative to traditional semiconductors in field effect transistors (FET), as current $Si$ FET technology inevitably encounters intrinsic scaling limitations. We discuss the prospect of a thin film Vanadium Oxide Mott metal-insulator transition (MIT) field- effect transistor as an electronic logic switch. Focusing on the intrinsic material properties of $VO_2$ and the underlying physical mechanisms of its MIT, we estimate the energy dissipation and time delay per switching operation. The device- independent power-delay plane of $VO_2$ Mott transistors is presented and its scaling limits compared to that of $Si$. Our simple model predicts an intrinsic $VO_2$ material lower bound switching time of the order of $0.5 \ ps$ at a power transfer of $0.1 \ \mu W$.