The optical and electrical properties of Non-tapered InN nanorods grown by plasma-assisted MOCVD

ORAL

Abstract

We report the non-tapered InN nanorods grown by plasma assisted metal-organic vapour deposition (MOCVD) methods. By carefully using RF plasma techniques, we were able to grow InN nanorods without NH3 at below decomposition temperature. The optical and structural qualities were evaluated by temperature dependent photoluminescence (PL) and current-voltage measurement. The PL revealed the low intrinsic carrier concentration and high structural quality of the InN nanorods. The conductance measurement, via nanoprobe system, agreed with the observed PL behaviors. The detail experimental results and their analysis will be discussed in the presentation.

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Authors

  • Hye-Won Seo

    Department of Physics and Astronomy, University of Arkansas at Little Rock, Dept. of Physics and Astronomy, University of Arkansas at Little Rock

  • Dever Norman

    Department of Physics and Astronomy, University of Arkansas at Little Rock, Dept. of Physics and Astronomy, University of Arkansas at Little Rock

  • Li-Wei Tu

    Dept. of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Taiwan

  • Shu-Yu Chiang

    Dept. of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Taiwan

  • In-Gann Chen

    Dept. of Materials Science and Engineering, National Cheng-Kung University, Taiwan

  • Kuo-Hao Lee

    Dept. of Materials Science and Engineering, National Cheng-Kung University, Taiwan

  • Jung-Hwan Kim

    Dept. of System Engineering, University of Arkansas at Little Rock

  • New-Jin Ho

    Dept. of Materials and Optoelectronic Engineering and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Taiwan