Influence of the Termination Layer on the Electronic Properties of LaMnO$_{3}$ / SrTiO$_{3}$ Interfaces
ORAL
Abstract
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Authors
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J. Santamaria
Universidad Complutense de Madrid, GFMC, Universidad Complutense de Madrid, Madrid 28040, Spain, Universidad Complutense de Madrid, Spain
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J. Garcia-Barriocanal
GFMC, Universidad Complutense de Madrid, Madrid 28040, Spain
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F.Y. Bruno
GFMC, Universidad Complutense de Madrid, Madrid 28040, Spain
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Z. Sefrioui
GFMC, Universidad Complutense de Madrid, Madrid 28040, Spain, Universidad Complutense de Madrid, Spain
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A. Rivera-Calzada
GFMC, Universidad Complutense de Madrid, Madrid 28040, Spain
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N. M. Nemes
GFMC, Universidad Complutense de Madrid, Madrid 28040, Spain
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C. Leon
GFMC, Universidad Complutense de Madrid, Madrid 28040, Spain
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M. Garcia-Hernandez
Instituto de Ciencia de Materiales de Madrid, Instituto de CC de Materiales de Madrid ICMM- CSIC. Madrid 28049, Spain.
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M. Varela
Oak Ridge National Laboratory, Oak Ridge TN 37831, Materials Science \& Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA, Oak Ridge National Laboratory, Oak Ridge Natl. Lab.
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S. J. Pennycook
Oak Ridge National Laboratory, Oak Ridge National Laboratory, Oak Ridge TN 37831, Materials Science \& Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA, Oak Ridge Natl. Lab.