Fabrication and Characterization of PrBa$_{2}$[Cu$_{x}$M$_{1-x}$]$_{3}$O$_{7}$ (M=Ga, Al ,x=0.2) Epitaxial Thin Films

We have fabricated epitaxial thin films of highly resistive material PrBa$_{2}$(Cu$_{1-x}$M$_{x})_{3}$O$_{7}$ (M=Al, Ga, x = 0.2) by substituting Cu with Ga and Al in PrBa$_{2}$Cu$_{3}$O$_{7}$.The electrical resistivity in these materials are many orders higher than in PrBa$_{2}$Cu$_{3}$O$_{7}$ at 77K, which will provide an effective potential barrier to YBa$_{2}$Cu$_{3}$O$_{7}$ in high T$_{c}$ S-I-S Josephson junction. X-ray diffraction, atomic force microscopy, Raman and temperature dependent resistivity measurements were performed to characterize the thin films. We will discuss the results of Raman spectroscopy with regard to the site detection of incorporated dopants in PrBa$_{2}$(Cu$_{1-x}$M$_{x})_{3}$O$_{7}$ and transport studies with regard to the mechanism of hopping conductivity.