Graphitic Switches

Four-probe dc current-voltage (I-V) characteristics were measured for 80-250 nm thick graphite samples with the lateral size ranging between $\sim $ 30 microns and 0.5 mm. All studied samples possess break junctions made by means of mechanical deformation or using focused ion beam (FIB). The measurements were performed in the temperature interval 2 K $\le $ T $\le $ 300 K and applied magnetic field up to 9 T. Nonlinear (I $\sim $ V$^{n}$, n $>$ 1) and hysteretic I-V curves were recorded even at T = 300 K. The results revealed the switching effect in I-V curves at applied current of a few microamps that could be reduced further by magnetic field. The results indicate that graphite is a promising material for switches that can be used in memory devices.