Electrical and structural characterization of high performance airbrushed organic thin film transistors

High performance airbrushed organic thin film transistors were demonstrated and characterized using electrical and structural methods. For example, high molecular weight poly-3-hexylthiophene (P3HT) transistors exhibited an average saturation regime mobility $>$0.02 cm$^{2}$V$^{-1}$s$^{-1}$, which is comparable to the best mobilities observed for transistors of this material prepared using other methods. Complex droplet and film formation dynamics were inferred, and the resulting film structure was observed using optical microscopy, atomic force microscopy, near-edge x-ray absorption find structure spectroscopy, and grazing incidence x-ray diffraction.