Growths of Lattice-Matched AlInN Alloys on GaN

III-Nitride alloys have tremendous importance for solid state lighting, power electronics, visible lasers, and thermoelectric applications. Lattice-matched AlInN material has the potential to realize large bandgap material for achieving optimized heterostucture design for nitride-based devices. In this work, the growths of AlInN alloys with different In-contents were performed. The growths were performed by employing metalorganic chemical vapor deposition. The AlInN alloys were grown on 2.7 $\mu $m undoped GaN template grown on sapphires. The growth temperatures were investigated from 750 $^{\circ}$C up to 860 $^{\circ}$C. From our experiments, the In-content from 0.367{\%} up to 22.8{\%} were obtained from AlInN alloy as the growth temperature were reduced from 860 $^{\circ}$C down to 750 $^{\circ}$C. The crystal quality and In-content of the AlInN film were characterized by high-resolution X-ray diffraction measurements. Scanning electron microscopy measurements and atomic force microscopy were carried out to characterize the surface morphology of the film. The optimized growth condition for the lattice-matched AlInN film was achieved by employing growth temperature of 780 $^{\circ}$C at growth pressure of 20 Torr, with growth rate of 0.15 $\mu $m/hr.