Experimental Demonstration of Memory Capacitance and Memory Resistance in VO$_{2}$ devices

Memristors are a special case of non-linear resistors which store information about the history of applied voltage in their instantaneous resistance value. These memory-resistors have attracted considerable attention for their possible uses in information storage and neuromorphic circuits. The same circuit principles behind memory-resistance have been extended to postulate that memory-capacitance and memory-inductance phenomena are also likely to exist$^{1}$. In this talk, we discuss experimental results from a Vanadium-Dioxide device which exhibits memory-capacitance$^{2}$. The nanoscale phase-separation phenomena which underlie this memory-capacitance suggest similar effects may exist in a variety of materials.\\[4pt] [1]. M. Di Ventra et.al. Proc. IEEE 97, 1717 (2009) \newline [2]. T.Driscoll et.al. Science. 325, 1518 (2009)