Tunable Schottky diodes fabricated from electrospun crossed SnO$_{2}$/PEDOT-PSSA nanoribbons

Hardware in most solid state devices contains at least one interface between a $p$-type and an $n$-type semiconductor. Such hetero-junctions are typically fabricated from all inorganic Si based materials. In the past two decades however, devices fabricated from organic-inorganic semiconductors that are not Si based, or from all organic semiconductors have been the focus of much research. Semiconducting $n$-doped metal oxides are also attractive for use in devices and of particular interest is tin oxide (SnO$_{2})$ as it is stable in air and is optically transparent with a band gap of $\sim $3.4 eV. The $p$-doped conducting polymer PEDOT-PSSA is also stable in air and is widely used in flexible devices. We shall report on the electrospinning technique to fabricate in air Schottky diodes, by simply crossing $n$-doped SnO$_{2}$ and $p$-doped PEDOT-PSSA nanoribbons. The device parameters could be tuned by a back gate bias and by shining UV light. The diode parameters were calculated using the standard thermionic emission model of a Schottky and was tested as a half wave rectifier.