Coulomb blockade magnetoresistance in organic spin transport device

ORAL

Abstract

Using buffer-layer-assisted growth, we successfully fabricated organic spin transport devices with a discontinuous granular magnetic layer centered in an organic spacer film. The Coulomb blockade magnetoresistance (MR) effects were observed, as predicted by X.-G. Zhang \textit{et al} (Phys. Rev. B. 81, 155122, 2010). The spin-dependent Coulomb blockade voltage arises from the coupled magnetic dots inside the organic material and correlate with the observed MR effect.

–

Authors

  • Dali Sun

    Oak Ridge National Laboratory

  • X.-G Zhang

    Oak Ridge National Laboratory

  • Paul C. Snijders

    Oak Ridge National Lab, Oak Ridge National Laboratory

  • Hangwen Guo

    The University of Tennessee, Knoxville \& Oak Ridge National Laboratory, The University of Tennessee / Oak Ridge National Laboratory

  • Zheng Gai

    Oak Ridge National Lab, Oak Ridge National Laboratory \& Center for Nanophase Materials Science, Oak Ridge National Laboratory

  • T. Zac Ward

    Oak Ridge National Lab, Oak Ridge National Laboratory

  • Jian Shen

    Oak Ridge National Lab, The University of Tennessee, Knoxville \& Fudan University, University of Tennessee \& Fudan University, The University of Tennessee / Fudan University, Fudan University; The University of Tennessee