Voltage Manipulation of Magnetic Anisotropy in MgO/Ferromagnet/Ag system

Recently, the development of new types of memory storage and processing devices has led to great interest in voltage-induced manipulation of magnetic properties in ferromagnetic metals (FM). We investigate the voltage-induced changes in the magnetic properties of a FM in an Indium Tin Oxide (ITO)/Poly(methyl methacrylate) (PMMA)/MgO/FM/Ag system. Samples are fabricated through molecular beam epitaxy (MBE) synthesis and PMMA resist is used as a dielectric layer. ITO is used for the top transparent conductive electrode and magnetic properties are examined through magneto-optic Kerr effect (MOKE) measurements. We report our results and observations of voltage-induced manipulation of the magnetic anisotropy in ITO/PMMA/MgO/FM/Ag system.