Synthesis and Characterization of InAs / InSb Nanowire Heterojunctions

InSb is a very promising material for both electronic and optoelectronic devices due to its unique features, including a very small band gap, large bulk mobility, enormous electronic g- factor and strong spin-orbit interaction. In particular, the small effective mass of InSb makes it straightforward to fabricate devices that display effects due to quantum confinement [1,2]. Here InAs/InSb nanowire heterostructures were grown by metal-organic vapor-phase epitaxy on InAs $\left (111\right)$B substrates. We investigated morphology changes of InAs/InSb nanowires with varying growth temperature and V/III ratio. The samples were characterized using scanning electron microscopy and high resolution transmission electron microscopy. In order to study the transport properties of InAs/InSb nanowires, field effect transistors were fabricated on SiO$_2$/Si substrates and characterized at room temperature and 4.2 K. \\[4pt] [1] H. A. Nilsson {\it et al.}, Nano Lett. {\bf 9}, 3151 (2009) \\[0pt] [2] P. Caroff {\it et al.}, Small {\bf4}, 878 (2008)