Controlling Inelastic Light Scattering Quantum Pathways in Graphene

ORAL

Abstract

Graphene exhibits unique tunable optical properties. Researchers have observed infrared absorptions in graphene interband transitions as well as intraband transitions can be modified substantially through electrostatic gating. At the same time, inelastic Raman scattering from few layer graphene is readily observable and widely used to characterize graphene quality, and to probe graphene electron-phonon interactions. In strongly gated graphene, Raman scattering from graphene can also be varied from electrical doping through direct change of electronic transitions. In this talk, I will describe how the Raman intensity of G-mode and 2D-mode Raman varies with the Fermi energy in doped graphene.

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Authors

  • Jason Horng

    Dept of Physics, University of California at Berkeley, UC Berkeley

  • Chi-Fan Chen

    UC Berkeley

  • Cheol-Hwan Park

    Department of Materials, University of Oxford, UC Berkeley, University of California, Berkeley

  • Bryan Boudouris

    University of California, Berkeley, UC Berkeley

  • Baisong Geng

    Dept of Physics, University of California at Berkeley, UC Berkeley

  • Caglar Girit

    Dept of Physics, University of California at Berkeley, UC Berkeley

  • A. Zettl

    UC Berkeley, Department of Physics, UC Berkeley, Department of Physics, University of California at Berkeley and Materials Sciences Division, Lawrence Berkeley National Laboratory, Department of Physics, University of California at Berkeley, Berkeley, CA 94720 U.S.A

  • Michael Crommie

    UC Berkeley, Department of Physics, UC Berkeley, Dept. of Physics at U.C. Berkeley / Lawrence Berkeley National Lab

  • Rachel Segalman

    UC Berkeley, Department of Chemical Engineering, UC-Berkeley, University of California, Berkeley, Department of Chemical Engineering, University of California , Berkeley, University of California Berkeley, University of California - Berkeley

  • Steven G. Louie

    University of California, Berkeley and Lawrence Berkeley National Laboratory, Department of Physics, University of California at Berkeley, and Materials Sciences Division, Lawrence Berkeley National Lab, UC Berkeley, Department of Physics, U. C. Berkeley and Materials Sciences Division, Lawrence Berkeley National Laboratory, University of California at Berkeley and Lawrence Berkeley National Laboratory, University of California-Berkeley and Lawrence Berkeley National Lab, Department of Physics, University of California at Berkeley, Phys Dept. UC Berkeley, Department of Physics, University of California, Berkeley and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, University of California at Berkeley and Lawrence Berkeley National Lab

  • Feng Wang

    Dept of Physics, University of California at Berkeley, UC Berkeley, Phys Dept. UC Berkeley