Epitaxial growth of high quality Bi$_{2}$Se$_{3}$ thin films on CdS

ORAL

Abstract

We report the experiment of high quality epitaxial growth of Bi$_{2}$Se$_{3}$ thin films on lattice-matched hexagonal CdS (0001) substrates using a solid source molecular-beam epitaxy system. Layer-by-layer growth of single crystal Bi2Se3 has been observed from the first quintuple layer with larger surface triangular terraces. The improved film quality facilitates the characterization of surface states during magneto-transport measurements, such as high Hall mobility of $\sim $6000 cm2/V?s, a distinct Shubnikov-de Haas (SdH) oscillations and weak anti-localization cusp in the magnetic field dependent longitudinal resistance. These characteristics of Bi$_{2}$Se$_{3}$ thin films promise a variety of potential applications in ultra-fast, low-power dissipation devices.

–

Authors

  • Xufeng Kou

    UCLA Electrical Engineering, University of California, Los Angeles

  • Liang He

    University of California, Los Angeles

  • Faxian Xiu

    Iowa State University, Department of Electrical and Computer Engineering, Iowa State University

  • Murong Lang

    UCLA Electrical Engineering, University of California, Los Angeles

  • Yong Wang

    The University of Queensland

  • Alexei Federov

    Lawrence Berkeley National Laboratory

  • Xinxin Yu

    UCLA Electrical Engineering, University of California, Los Angeles

  • Jin Zou

    The University of Queensland

  • Kang Wang

    UCLA Electrical Engineering, University of California, Los Angeles